Department of Materials Science and Metallurgy, West Cambridge
Applications are invited for a postdoctoral research position in the University of Cambridge to focus on the characterisation of gallium nitride and related materials. The postdoctoral researcher will engage with a number of projects led by Professor Rachel Oliver and Professor David Wallis in the Cambridge Centre for Gallium Nitride. In particular, the person appointed will work on the characterisation of nitride devices grown on silicon. However, there will also be opportunities for engagement with other topics, particularly the growth of cubic GaN on SiC on Si, and the application of porous nitrides in the heterogeneous integration context.
The Cambridge Centre for Gallium Nitride (in the Department of Materials Science and Metallurgy at the University of Cambridge) is one of a small number of places in the world to have, in close proximity and on the same site, state-of-the-art gallium nitride growth equipment and extensive advanced electron microscopy characterisation facilities along with a broad range of other characterisation facilities. Our work focusses on understanding the fundamental links between crystal growth, materials structure and optoelectronic properties in the nitride semiconductors, and on exploiting that understanding in the development of devices.
The post-doctoral researcher will contribute to this strategy by performing transmission electron microscopy characterisation of a range of nitride samples. They will also have the opportunity to contribute to materials characterisation using a range of other techniques which could include scanning electron microscopy, X-ray diffraction, atomic force microscopy, photoluminescence and Hall effect measurements. They will help train students in the application transmission electron microscopy and collaborate extensively with both crystal growers and device physicists. They will contribute to projects involving extensive interaction both with other universities and with industry, and will develop effective working relationships with a range of collaborators.
The successful candidate will have extensive expertise in advanced electron microscopy of semiconductors. Experience of nitride semiconductors is particularly desirable.
Additionally, the successful candidate will have a PhD in a relevant field (e.g. materials science, physics, engineering) and will have a track record of publication in peer-reviewed international journals, together with good communication skills. They will have experience of both team-based and independent working.
The position is for six months in the first instance with an ideal starting date of 1 February 2022.
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Further information can be obtained from Professor R.A.Oliver: email@example.com
Please quote reference LJ29305 on your application and in any correspondence about this vacancy.
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